WD4000 Patternless Wafer Geometry Measurement System

The WD4000 Patternless Wafer Geometric Measurement System utilizes high-precision spectral confocal sensing technology and optical interference bidirectional scanning technology to perform non-contact scanning and mapping, achieving parameters that reflect surface topography such as wafer thickness, TTV, LTV, Bow, Warp, TIR, SORI, etc. It automatically measures wafer thickness, surface roughness, 3D topography, single-layer film thickness, and multi-layer film thickness.

1. Using spectral confocal transmission technology to measure wafer parameters such as Thickness, TTV, LTV, BOW, WARP, TIR, SORI, while generating mapping diagrams;

2. Employing white light interferometry technology to perform non-contact scanning of the wafer surface and simultaneously construct 3D tomographic images of the surface, displaying 2D cross-sectional views and 3D stereoscopic color views, efficiently analyzing surface topography, roughness, and related 3D parameters;

3. Based on a spectral analyzer for white light interferograms, using a numerical seven-point phase-shift algorithm to achieve sub-nanometer resolution for measuring local surface height, enabling film thickness measurement functionality;

4. The detection light emitted by the infrared sensor reflects off different surfaces of the wafer and forms interference, from which the distance between the two surfaces (i.e., thickness) is calculated. This can be applied to measure the multi-layer thickness of bonded wafers. The sensor can be used to measure the thickness of various materials, including silicon carbide, sapphire, gallium nitride, silicon, etc.

Measurement Functions

1. Thickness measurement module: Thickness, TTV (Total Thickness Variation), LTV, BOW, WARP, TIR, SORI, flatness, etc.;

2. Microscopic topography measurement module: Roughness, flatness, micro-geometric profile, area, volume, etc.

3. Provides data processing functions across four major modules: position adjustment, correction, filtering, and extraction. Position adjustment includes functions such as image leveling and mirroring; correction includes spatial filtering, retouching, spike denoising, etc.; filtering includes form removal, standard filtering, spectral filtering, etc.; extraction includes area extraction and profile extraction, etc.

4. Offers five major analysis functions: geometric profile analysis, roughness analysis, structure analysis, frequency analysis, and functional analysis. Geometric profile analysis includes feature measurements such as step height, distance, angle, curvature, as well as straightness and roundness form tolerance evaluation; roughness analysis includes full parameters according to international standards ISO4287 for line roughness, ISO25178 for surface roughness, ISO12781 for flatness, etc.; structure analysis includes pore volume and troughs.

The WD4000 Patternless Wafer Geometric Measurement System can be widely applied in substrate manufacturing, wafer manufacturing, packaging process inspection, 3C electronic glass screens and their precision components, optical processing, display panels, MEMS devices, and other ultra-precision machining industries. It can measure various surfaces from smooth to rough, low reflectivity to high reflectivity, and parameters such as thickness, roughness, flatness, micro-geometric profile, curvature of workpieces from nanometer to micrometer levels. It provides evaluation criteria based on four major domestic and international standards—SEMI/ISO/ASME/EUR/GBT—covering over 300 2D and 3D parameters.

Product Advantages

1. Non-contact integrated measurement of thickness and 3D Wiener topography

The WD4000 Patternless Wafer Geometric Measurement System integrates thickness measurement modules and 3D topography and roughness measurement modules, enabling the measurement of thickness, TTV, LTV, BOW, WARP, roughness, and 3D topography with a single machine.

2. High-precision thickness measurement technology

(1) Utilizes high-resolution spectral confocal transmission technology for efficient scanning of wafers.

(2) Equipped with a multi-degree-of-freedom electrostatic discharge coating vacuum chuck, supporting wafer sizes up to 12 inches.

(3) Employs mapping follow technology, enabling programmable automatic measurements including multiple points, lines, and surfaces.

3. High-precision 3D topography measurement technology

(1) Uses optical white light interferometry technology, precision Z-axis scanning modules, and high-precision 3D reconstruction algorithms, achieving a Z-axis resolution of up to 0.1 nm;

(2) Vibration isolation design reduces ground vibration and airborne acoustic noise, ensuring high measurement repeatability.

(3) Machine vision technology detects image mark points, and virtual fixtures align samples, enabling automated continuous measurement of multiple points of topography.

4. Large-travel high-speed gantry structure platform

(1) Large-travel gantry structure (400x400x75 mm) with a movement speed of 500 mm/s.

(2) High-precision granite base and beam ensure overall structural stability and reliability.

(3) Key motion mechanisms use high-precision linear guide rails and AC servo direct-drive motors, paired with a grating system with a resolution of 0.1 μm, ensuring high precision and efficiency of the equipment.

5. Simple operation, effortless and worry-free

(1) Integrated joystick with XYZ three-axis displacement adjustment functions allows quick completion of pre-measurement preparations such as stage translation and Z-axis focusing.

(2) Features dual anti-collision design to prevent damage to the objective lens and the measured object due to misoperation.

(3) Equipped with electric objective lens switching function, making observation fast and simple.

Application Scenarios

1. Measurement of patternless wafer thickness and warpage

Through non-contact measurement, the 3D topography of the upper and lower surfaces of the wafer is reconstructed. The powerful measurement analysis software stably calculates wafer thickness, roughness, and total thickness variation (TTV), effectively protecting the integrity of wafers with films or patterns.

2. Patternless wafer roughness measurement

3D images of the wafer surface after coarse and fine grinding in the wafer thinning process, using surface roughness Sa values and the stability of multiple measurements to feedback processing quality. For thinned wafers measured in the strong noise environment of the production workshop, the roughness of finely ground wafers is concentrated around 5 nm. Based on 25 measurement data, the repeatability is calculated as 0.046987 nm, indicating good measurement stability.

Please note: Due to market development and product development needs, the content in this product documentation may be updated or modified at any time according to actual circumstances without prior notice. We appreciate your understanding for any inconvenience caused.